【英文标准名称】:StandardGuideforIonizingRadiation(TotalDose)EffectsTestingofSemiconductorDevices
【原文标准名称】:半导体器件电离辐射(总剂量)效应试验的标准指南
【标准号】:ASTMF1892-2006
【标准状态】:现行
【国别】:
【发布日期】:2006
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(Guide)
【标准水平】:()
【中文主题词】:双极;电离辐射;微电子学;半导体器件;X射线试验
【英文主题词】:ASIC(applicationspecificintegratedcircuit);bipolar;cobalt60testing;gammaraytests;ionizingradiationtesting;MOS;radiationhardness;semiconductordevices;timedependenteffects;totaldosetesting;X-raytesting
【摘要】:Electroniccircuitsusedinspace,military,andnuclearpowersystemsmaybeexposedtovariouslevelsofionizingradiation.Itisessentialforthedesignandfabricationofsuchcircuitsthattestmethodsbeavailablethatcandeterminethevulnerabilityorhardness(measureofnonvulnerability)ofcomponentstobeusedinsuchsystems.Somemanufacturerscurrentlyaresellingsemiconductorpartswithguaranteedhardnessratings.Useofthisguideprovidesabasisforstandardizedqualificationandacceptancetesting.1.1Thisguidepresentsbackgroundandguidelinesforestablishinganappropriatesequenceoftestsanddataanalysisproceduresfordeterminingtheionizingradiation(totaldose)hardnessofmicroelectronicdevicesfordoseratesbelow300rd(SiO2)/s.Thesetestsandanalysiswillbeappropriatetoassistinthedeterminationoftheabilityofthedevicesundertesttomeetspecifichardnessrequirementsortoevaluatethepartsforuseinarangeofradiationenvironments.1.2Themethodsandguidelinespresentedwillbeapplicabletocharacterization,qualification,andlotacceptanceofsilicon-basedMOSandbipolardiscretedevicesandintegratedcircuits.Theywillbeappropriatefortreatmentoftheeffectsofelectronandphotonirradiation.1.3Thisguideprovidesaframeworkforchoosingatestsequencebasedongeneralcharacteristicsofthepartstobetestedandtheradiationhardnessrequirementsorgoalsfortheseparts.1.4Thisguideprovidesfortradeoffsbetweenminimizingtheconservativenatureofthetestingmethodandminimizingtherequiredtestingeffort.1.5Determinationofaneffectiveandeconomicalhardnesstesttypicallywillrequireseveralkindsofdecisions.Apartialenumerationofthedecisionsthattypicallymustbemadeisasfollows:1.5.1DeterminationoftheNeedtoPerformDeviceCharacterizationForsomecasesitmaybemoreappropriatetoadoptsomekindofworstcasetestingschemethatdoesnotrequiredevicecharacterization.Forothercasesitmaybemosteffectivetodeterminetheeffectofdose-rateontheradiationsensitivityofadevice.Asnecessary,theappropriatelevelofdetailofsuchacharacterizationalsomustbedetermined.1.5.2DeterminationofanEffectiveStrategyforMinimizingtheEffectsofIrradiationDoseRateontheTestResultTheresultsofradiationtestingonsometypesofdevicesarerelativelyinsensitivetothedoserateoftheradiationappliedinthetest.Incontrast,manyMOSdevicesandsomebipolardeviceshaveasignificantsensitivitytodoserate.Severaldifferentstrategiesformanagingthedoseratesensitivityoftestresultswillbediscussed.1.5.3ChoiceofanEffectiveTestMethodologyTheselectionofeffectivetestmethodologieswillbediscussed.1.6LowDoseRequirementsHardnesstestingofMOSandbipolarmicroelectronicdevicesforthepurposeofqualificationorlotacceptanceisnotnecessarywhentherequiredhardnessis100rd(SiO2)orlower.1.7SourcesThisguidewillcovereffectsduetodevicetestingusingirradiationfromphotonsources,suchas60Coirradiators,137Csirradiators,andlowenergy(approximately10keV)X-raysources.Othersourcesoftestradiationsuchaslinacs,VandeGraaffsources,Dymnamitrons,SEMs,andflashX-raysourcesoccasionallyareusedbutareoutsidethescopeofthisguide.1.8Displacementdamageeffectsareoutsidethescopeofthisguide,aswell.1.9ThevaluesstatedinSIunitsaretoberegardedasthestandard.
【中国标准分类号】:L40
【国际标准分类号】:31_080_01
【页数】:40P.;A4
【正文语种】: